2n5551 / mmbt5551 ? npn ge neral-purpose amplifier ? 2009 fairchild semiconductor corporation www.fairchildsemi.com 2n5551 / mmbt5551 rev. 1.1.0 1 june 2013 2n5551 / mmbt5551 npn general-purpose amplifier ordering information (1) note: 1. suffix ?-c? means center collector in 2n5551 (1. emitter 2. collector 3. base) suffix ?-y? means h fe 180~240 in 2n5551 (test condition: i c = 10 ma, v ce = 5.0 v) part number top mark package packing method 2n5551ta 5551 to-92 3l ammo 2n5551tfr 5551 to-92 3l tape and reel 2n5551tf 5551 to-92 3l tape and reel 2N5551BU 5551 to-92 3l bulk mmbt5551 3s sot-23 3l tape and reel 1. base 2. emitter 3. collector sot-23 1 2 3 marking: 3s to-92 2n5551 mmbt5551 description this device is designed for general-purpose high-voltage amplifiers and gas discharge display drivers.
2n5551 / mmbt5551 ? npn ge neral-purpose amplifier ? 2009 fairchild semiconductor corporation www.fairchildsemi.com 2n5551 / mmbt5551 rev. 1.1.0 2 absolute maximum ratings (2) stresses exceeding the absolute maximum ratings may damage the device. the device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. in addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. the absolute maximum ratings are stress ratings only. values are at t a = 25c unless otherwise noted. notes: 2. these ratings are limiting values above which the servic eability of any semiconductor device may be impaired. 3. these ratings are based on a ma ximum junction temperature of 150 c. these are steady-state limits. fairchild semiconduc tor should be consulted on applications involving pulsed or low-duty cycle operations. thermal characteristics values are at t a = 25c unless otherwise noted. symbol paramete rvalueunits v ceo collector-emitter voltage 160 v v cbo collector-base voltage 180 v v ebo emitter-base voltage 6 v i c collector current - continuous 600 ma t j , t stg (2) junction and storage temperature -55 to +150 c symbol parameter maximum units 2n5551 mmbt5551 p d total device dissipation 625 350 mw derate above 25 c5.02.8mw/ c r jc thermal resistance, junction to case 83.3 c/w r ja thermal resistance, junction to ambient 200 357 c/w
2n5551 / mmbt5551 ? npn ge neral-purpose amplifier ? 2009 fairchild semiconductor corporation www.fairchildsemi.com 2n5551 / mmbt5551 rev. 1.1.0 3 electrical characteristics (4) values are at t a = 25c unless otherwise noted. note: 4. pcb board size fr-4 76 x 114 x 0.6 t mm 3 (3.0 inch 4.5 inch 0.062 inch) with minimum land pattern size. symbol parameter test condition min. max. units off characteristics v (br)ceo collector-emitter breakdown voltage i c = 1.0 ma, i b = 0 160 v v (br)cbo collector-base breakdown voltage i c = 100 a, i e = 0 180 v v (br)ebo emitter-base breakdown voltage i e = 10 a, i c = 0 6.0 v i cbo collector cut-off current v cb = 120 v, i e = 0 50 na v cb = 120 v, i e = 0, t a = 100 c50 a i ebo emitter cut-off current v eb = 4.0 v, i c = 0 50 na on characteristics h fe dc current gain i c = 1.0 ma, v ce = 5.0 v 80 i c = 10 ma, v ce = 5.0 v 80 250 i c = 50 ma, v ce = 5.0 v 30 v ce(sat) collector-emitter saturation voltage i c = 10 ma, i b = 1.0 ma 0.15 v i c = 50 ma, i b = 5.0 ma 0.20 v v be(sat) base-emitter on voltage i c = 10 ma, i b = 1.0 ma 1.0 v i c = 50 ma, i b = 5.0 ma 1.0 v small-signal characteristics f t current gain bandwidth product i c = 10 ma, v ce = 10 v, f = 100 mhz 100 mhz c obo output capacitance v cb = 10 v, i e = 0, f = 1.0 mhz 6.0 pf c ibo input capacitance v be = 0.5 v, i c = 0, f = 1.0 mhz 20 pf h fe small-signal current gain i c = 1.0 ma, v ce = 10 v, f = 1.0 khz 50 250 nf noise figure i c = 250 a, v ce = 5.0 v, r s =1.0 k , f=10 hz to 15.7 khz 8.0 db
2n5551 / mmbt5551 ? npn ge neral-purpose amplifier ? 2009 fairchild semiconductor corporation www.fairchildsemi.com 2n5551 / mmbt5551 rev. 1.1.0 4 typical performance characteristics figure 1. typical pulsed current gain vs. collector current figure 2. collec tor-emitter satura tion voltage vs. collector current figure 3. base-emitter saturation voltage vs. collector current figure 4. base-emitter on voltage vs. collector current figure 5. collector cu t-off current vs. ambient temperature figure 6. input and output capacitance vs. reverse voltage 1 10 100 1000 0 50 100 150 200 250 125 o c 100 o c 75 o c -40 o c 25 o c v ce =5v h fe - dc current gain i c - collector current [ma] 1 10 100 0.01 0.1 1 10 ?10 125 o c 100 o c 75 o c -40 o c 25 o c v ce(sat) - collector-emitter voltage [v] i c - collector current [ma] 110100 0.2 0.4 0.6 0.8 1.0 125 o c 100 o c 75 o c -40 o c 25 o c v be(sat) - base-emitter voltage [v] i c - collector current [ma] 1 10 100 1000 0.0 0.2 0.4 0.6 0.8 1.0 1.2 t a = 125 o c t a = 100 o c t a = 75 o c t a = -40 o c t a = 25 o c v be(on) - base-emitter voltage [v] i c - collector current [ma] 25 50 75 100 125 1 10 50 t - ambie nt temp erature ( c) i - colle ctor current (na) a cbo v = 10 0v cb c ob c ib capacitance [pf] reverse bias voltage [v]
2n5551 / mmbt5551 ? npn ge neral-purpose amplifier ? 2009 fairchild semiconductor corporation www.fairchildsemi.com 2n5551 / mmbt5551 rev. 1.1.0 5 typical performance characteristics (continued) figure 7. collector- emitter breakdown voltage with resistance between emitter-base figure 8. small signal current gain vs. collector current figure 9. power dissipation vs. ambient temperature between emitter-base 0.1 1 10 100 1000 160 180 200 220 240 260 resistance (k ) bv - breakdown voltage (v) cer i = 1.0 ma c vs collector current 11050 0 4 8 12 16 i - collector current (ma) h - small signal current gain c fe freg = 20 mhz v = 10v ce 0 25 50 75 100 125 150 0 100 200 300 400 500 600 700 temperature ( c) p - power dissipation (mw) d o to-92 sot-23
2n5551 / mmbt5551 ? npn ge neral-purpose amplifier ? 2009 fairchild semiconductor corporation www.fairchildsemi.com 2n5551 / mmbt5551 rev. 1.1.0 6 physical dimensions figure 10. 3-lead, to92, jedec to-92 compliant straight lead configuration (old to92am3) (active) package drawings are provided as a servic e to customers considering fairchild co mponents. drawings may change in any manner without notice. please note the revision and/or date on the drawi ng and contact a fairchild semi conductor representative to ver ify or obtain the most recent revision. package specifications do not ex pand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers fairchild products. always visit fairchild semiconduct or?s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/packaging/ . for current tape and reel specifications, visit fairchild semiconductor?s online packaging area: http://www.fairchildsemi.com/packaging/tr/to92pdd_tr.pdf . d
2n5551 / mmbt5551 ? npn ge neral-purpose amplifier ? 2009 fairchild semiconductor corporation www.fairchildsemi.com 2n5551 / mmbt5551 rev. 1.1.0 7 physical dimensions (continued) figure 11. 3-lead, to92, molded, 0.200 in-l ine spacing ld form(j62z option) (active) package drawings are provided as a servic e to customers considering fairchild co mponents. drawings may change in any manner without notice. please note the revision and/or date on the drawi ng and contact a fairchild semi conductor representative to ver ify or obtain the most recent revision. package specifications do not ex pand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers fairchild products. always visit fairchild semiconduct or?s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/packaging/ . for current tape and reel specifications, visit fairchild semiconductor?s online packaging area: http://www.fairchildsemi.com/packaging/tr/to92_tr.pdf . d
2n5551 / mmbt5551 ? npn ge neral-purpose amplifier ? 2009 fairchild semiconductor corporation www.fairchildsemi.com 2n5551 / mmbt5551 rev. 1.1.0 8 physical dimensions (continued) figure 12. 3-lead, sot23, jede c to-236, low profile (active) package drawings are provided as a servic e to customers considering fairchild co mponents. drawings may change in any manner without notice. please note the revision and/or date on the drawi ng and contact a fairchild semi conductor representative to ver ify or obtain the most recent revision. package specifications do not ex pand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers fairchild products. always visit fairchild semiconduct or?s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/packaging/ . for current tape and reel specifications, visit fairchild semiconductor?s online packaging area: http://www.fairchildsemi.com/packaging/tr/sot23-3l_tr.pdf . land pattern recommendation notes: unless otherwise specified a) reference jedec registration to-236, variation ab, issue h. b) all dimensions are in millimeters. c) dimensions are inclusive of burrs, mold flash and tie bar extrusions. d) dimensioning and tolerancing per asme y14.5m - 1994. e) drawing file name: ma03drev10 3 12 see detail a seating plane scale: 2x gage plane (0.55) (0.93) 1.20 max c 0.10 0.00 0.10 c 2.400.30 2.920.20 1.30 +0.20 -0.15 0.60 0.37 0.20 a b 1.90 0.95 (0.29) 0.95 1.40 2.20 1.00 1.90 0.25 0.23 0.08 0.20 min sot-23
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